A single switch system consisting of one IGBT and one ideal free-wheeling diode is implemented to simulate the power loss and junction temperature of the IGBT device at the given static DC voltage and current conditions. This simulation aims to evaluate an IGBT device.
The simulation settings include DC bus voltage and current being switched, PWM frequency, PWM duty cycle, and case temperature. Results are shown in summary tables as well as time dependent waveforms. Additionally, the designers can compare the effect of parameter variations or the operation of different parts directly.